| 发明名称 |
Semiconductor device having fin-shaped structure and method for fabricating the same |
| 摘要 |
A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween. |
| 申请公布号 |
US9263257(B2) |
申请公布日期 |
2016.02.16 |
| 申请号 |
US201414312707 |
申请日期 |
2014.06.24 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chien Chin-Cheng;Hsu Hsin-Kuo;Liu Chih-Chien;Lin Chin-Fu;Wu Chun-Yuan |
| 分类号 |
H01L21/205;H01L21/336;H01L21/8232;H01L29/08;H01L29/16;H01L29/43;H01L29/78;H01L29/417;H01L21/02;H01L21/311;H01L29/36;H01L29/06 |
主分类号 |
H01L21/205 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor device with fin-shaped structure, comprising:
a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, wherein the epitaxial layer and the fin-shaped structure comprises a linear gradient of germanium concentration therebetween. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
