发明名称 |
Decoupling MIM capacitor designs for interposers and methods of manufacture thereof |
摘要 |
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device. |
申请公布号 |
US9263415(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414265223 |
申请日期 |
2014.04.29 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tzeng Kuo-Chyuan;Tu Kuo-Chi;Wang Chen-Jong;Lee Hsiang-Fan |
分类号 |
H01L23/00;H01L23/14;H01L23/498;H01L49/02;H01L27/06;H01L23/31;H01L23/522;H01L27/08 |
主分类号 |
H01L23/00 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method for forming a semiconductor device, the method comprising:
providing an interposer, the interposer having a first plurality of contact pads and a second plurality of contact pads, the interposer having a decoupling metal-insulator-metal (MIM) capacitor formed thereon, wherein the decoupling MIM capacitor comprises a bottom electrode, a capacitor dielectric over the bottom electrode, and a top electrode over the capacitor dielectric, wherein the interposer comprises a bottom plate pick-up, the bottom plate pick-up being interposed between the bottom electrode and a substrate of the interposer; and mounting an integrated circuit die to the second plurality of contact pads, the decoupling MIM capacitor being electrically interposed between the integrated circuit die and a first contact pad of the first plurality of contact pads. |
地址 |
Hsin-Chu TW |