发明名称 Thermal interface material with support structure
摘要 Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
申请公布号 US9263364(B2) 申请公布日期 2016.02.16
申请号 US201113215416 申请日期 2011.08.23
申请人 Advanced Micro Devices, Inc.;ATI Technologies ULC 发明人 Touzelbaev Maxat;Refai-Ahmed Gamal;Yang Yizhang;Black Bryan
分类号 H01L23/48;H01L23/42 主分类号 H01L23/48
代理机构 代理人 Honeycutt Timothy M.
主权项 1. An apparatus, comprising: a first semiconductor chip having a first footprint; a second semiconductor chip mounted on the first semiconductor chip and having a second footprint smaller than the first footprint and a side facing away from the first semiconductor chip; and a thermal interface material layer on the side of the second semiconductor chip, the thermal interface material layer containing a support structure having a third footprint larger than the second footprint.
地址 Sunnyvale CA US