| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a gate insulating layer in the transistor region. |
| 申请公布号 |
US2016043138(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514882183 |
申请日期 |
2015.10.13 |
| 申请人 |
SK hynix Inc. |
发明人 |
YI Jae-Yun |
| 分类号 |
H01L27/24;H01L29/786;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
Gyeonggi-do KR |
