| 发明名称 |
THIN FILM TRANSISTOR, DISPLAY APPARATUS COMPRISING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY APPARATUS |
| 摘要 |
A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer. |
| 申请公布号 |
US2016042959(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514597563 |
申请日期 |
2015.01.15 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE Jongchan;KHANG Yoonho;KIM Myounghwa;BAE Joonhwa;CHA Myounggeun |
| 分类号 |
H01L21/285;H01L21/02;H01L29/417;H01L29/66;H01L29/786;H01L29/45 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor (TFT), comprising:
a substrate including a first area, a second area adjacent to one side of the first area, and a third area adjacent to another side of the first area; a polysilicon layer on the substrate; and a source electrode and a drain electrode on the polysilicon layer in the first and third areas, each of the source electrode and the drain electrode including a metal silicide layer adjacent the polysilicon layer. |
| 地址 |
Yongin-City KR |
