STATIC RANDOM ACCESS MEMORY DEVICE INCLUDING WRITE ASSIST CIRCUIT AND WRITING METHOD THEREOF

摘要

A static random access memory device may include a write driver configured to float one of a first bitline and a second bitline connected to a memory cell and apply a write voltage to the other bitline in response to a logic state of a data signal; a write failure detector configured to receive a voltage of the floated bitline and output a write failure signal; and an assist voltage generator configured to generate a write assist voltage in response to the write failure signal. The write driver may additionally provide the write assist voltage to a bitline to which the write voltage is applied.

主权项

1. A static random access memory device comprising:
a write driver configured to float either of a first bitline and a second bitline connected to a memory cell and to apply a write voltage to the other bitline in response to a logic state of a data signal; a write failure detector configured to receive a voltage of the floated bitline and output a write failure signal; and an assist voltage generator configured to generate a write assist voltage in response to the write failure signal, wherein the write driver additionally provides the write assist voltage to the bitline to which the write voltage is applied