SEMICONDUCTOR DEVICE

摘要

In a high-side region, a first n-diffusion region, in which a PMOS constituting a gate drive circuit is formed, and a second n-diffusion region, in which a p-diffusion region is formed, are provided on a surface layer of a p−− substrate. An NMOS constituting a gate drive circuit is formed in the p-diffusion region. A p-type isolation diffusion region at ground potential is provided between the first n-diffusion region and the second n-diffusion region, and the first re-diffusion region and the second n-diffusion region are electrically isolated. The first n-diffusion region is connected to a VB terminal at a power source potential. The second n-diffusion region is connected to a terminal at a reference or floating potential. The p-diffusion region is connected to a VS terminal at a reference potential. Accordingly, it is possible to suppress parasitic operation due to a surge, without using external components, and without element breakdown.

主权项

1. A semiconductor device, comprising:
a first semiconductor region of a second conductor type connected to a first potential, and disposed on a surface layer of a semiconductor layer of a first conductor type; a second semiconductor region of the second conductor type connected to one of a second potential lower than the first potential and a floating potential, and disposed on the surface layer of the semiconductor layer; a third semiconductor region of the first conductor type connected to the second potential, and disposed inside the second semiconductor region; a circuit which takes the second potential as a reference potential and operates at a potential between the reference potential and the first potential, the circuit being disposed in the first semiconductor region and the third semiconductor region; and an isolation region disposed between the first semiconductor region and the second semiconductor region, and electrically isolates the first semiconductor region from the second semiconductor region.