发明名称 PAD STRUCTURE OF A SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE PAD STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE PAD STRUCTUR
摘要 A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion—to provide high roughness and firm connection.
申请公布号 US2016043045(A1) 申请公布日期 2016.02.11
申请号 US201514920927 申请日期 2015.10.23
申请人 BAEK Nam-Gyu;LEE Young-Min;CHO Yun-Rae;KIM Sun-Dae 发明人 BAEK Nam-Gyu;LEE Young-Min;CHO Yun-Rae;KIM Sun-Dae
分类号 H01L23/00;H01L21/56;H01L21/768 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of manufacturing a pad structure of a semiconductor device, the method comprising: pattering an insulating layer to form an insulating layer pattern structure having a plug hole and at least one via hole; forming a plug in the plug hole; and forming a pad on the insulating layer pattern structure, on the plug and in the via hole to electrically connect the plug with the pad, wherein the pad includes a first surface of the pad having a protruded portion filling the via hole, and a second surface of the pad opposite to the first surface, the second surface having a recessed portion and an elevated portion to a location of the protruded portion.
地址 Namyangju-si KR