| 摘要 |
A magnetoresistance effect element (100) is provided with a heavy metal layer (11) composed of a heavy metal and shaped so as to extend in a first direction, a recording layer (12) composed of a ferromagnetic material and provided adjacent to the heavy metal layer (11), a barrier layer (13) composed of an insulating material and provided on the recording layer (12) on the surface on the opposite side from the heavy metal layer (11), and a reference layer (14) composed of a ferromagnetic material and provided adjacent to the surface of the barrier layer (13) on the opposite side from the recording layer (12). The direction of magnetization of the reference layer (14) has a component that is substantially fixed in the first direction, and the direction of magnetization of the recording layer (12) has a component that is variable in relation to the first direction. The magnetization of the recording layer (12) can be inverted by having an electrical current oriented in the same direction as the first direction be introduced to the heavy metal layer (11). |
