发明名称 |
DIE STRUCTURE, CONTACT TEST STRUCTURE, AND CONTACT TESTING METHOD UTILIZING THE CONTACT TEST STRUCTURE |
摘要 |
A die structure is described, including a device area and a contact test area. The device area has therein a device structure including a first contact plug. The contact test area has therein a contact test structure that includes a second contact plug and is different from the device structure. The contact test structure is also described, including a well, a heavily doped region in the well, and a contact plug, wherein the heavily doped region and the well are both of N-type or are both of P-type, and the contact plug is disposed over the heavily doped region. |
申请公布号 |
US2016041201(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201414456827 |
申请日期 |
2014.08.11 |
申请人 |
MACRONIX International Co., Ltd. |
发明人 |
Hung Che-Lun;Li Hsiao-Leng |
分类号 |
G01R1/07;G01R31/28 |
主分类号 |
G01R1/07 |
代理机构 |
|
代理人 |
|
主权项 |
1. A die structure, comprising:
a device area, having therein a device structure that includes a first contact plug; and a contact test area, having therein a contact test structure that includes a second contact plug and is different from the device structure. |
地址 |
Hsinchu TW |