发明名称 DIE STRUCTURE, CONTACT TEST STRUCTURE, AND CONTACT TESTING METHOD UTILIZING THE CONTACT TEST STRUCTURE
摘要 A die structure is described, including a device area and a contact test area. The device area has therein a device structure including a first contact plug. The contact test area has therein a contact test structure that includes a second contact plug and is different from the device structure. The contact test structure is also described, including a well, a heavily doped region in the well, and a contact plug, wherein the heavily doped region and the well are both of N-type or are both of P-type, and the contact plug is disposed over the heavily doped region.
申请公布号 US2016041201(A1) 申请公布日期 2016.02.11
申请号 US201414456827 申请日期 2014.08.11
申请人 MACRONIX International Co., Ltd. 发明人 Hung Che-Lun;Li Hsiao-Leng
分类号 G01R1/07;G01R31/28 主分类号 G01R1/07
代理机构 代理人
主权项 1. A die structure, comprising: a device area, having therein a device structure that includes a first contact plug; and a contact test area, having therein a contact test structure that includes a second contact plug and is different from the device structure.
地址 Hsinchu TW