THE SINGLE CRYSTAL INGOT GROWING APPARATUS

摘要

The present invention relates to a single crystal ingot growing apparatus for preventing splashing of silicon melt to an upper surface of a top ring when putting poly crystal silicon in. The present invention comprises: a crucible where silicon solution is accommodated; a heater provided around the crucible; an insulation main body provided around the heater; a ring plate-shaped top ring connected to an upper side of the insulation main body, and protrudes closer to the inner direction than the insulation main body; a heat blocking member provided to enable lifting around an ingot being increased from the crucible, and having an upper end which can be mounted on the top ring; and a splash preventing cover where silicon splashing into a space between the top ring and the heat blocking member is blocked.