NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer that is sandwiched between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer comprises a GaN layer, and the GaN layer has an n-type dopant concentration of 5 × 1018/cm3 or less.