发明名称 A PHOTOVOLTAIC CELL WITH A PASSIVATION LAYER AS WELL AS A METHOD FOR MANUFACTURING SUCH A PHOTOVOLTAIC CELL
摘要 A method for manufacturing a photovoltaic cell, wherein the method includes providing a wafer of Si-bulk material having a rear surface on a rear side which, in use, will be turned away from the sun and having a front surface on a front side which, in use, will be facing the sun. The method includes depositing an Al2O3-layer; depositing a SiO2-layer on top of the Al2O3-layer; and depositing a SiNx-capping layer on top of the SiO2-layer. Also disclosed a photovoltaic cell having such a stack of layers on its rear surface for p-type Si-wafers and on its front surface for n-type Si-wafers.
申请公布号 WO2016022026(A1) 申请公布日期 2016.02.11
申请号 WO2015NL50560 申请日期 2015.08.03
申请人 ASM INTERNATIONAL N.V. 发明人 GRANNEMAN, ERNST HENDRIK AUGUST
分类号 H01L31/0216;H01L31/0236;H01L31/056;H01L31/068;H01L31/18 主分类号 H01L31/0216
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