| 发明名称 |
INTERFACE LAYER FOR GATE STACK USING 03 POST TREATMENT |
| 摘要 |
Exemplary embodiments provide for fabricating a field effect transistor (FET) with an interface layer for a gate stack using an O3 post treatment. Aspects of the exemplary embodiments include: forming a semiconductor body upon a substrate; cleaning the surface of the semiconductor body; depositing a first dielectric layer on the semiconductor body; performing an O3 treatment that mixes with and penetrates the first dielectric layer and reacts with the semiconductor body to form a new interface layer; and performing gate stack processing, including deposition of a gate electrode. |
| 申请公布号 |
US2016042956(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514666770 |
申请日期 |
2015.03.24 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kittl Jorge A.;Rodder Mark S.;Wang Wei-E |
| 分类号 |
H01L21/28;H01L29/51;H01L29/778 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a field effect transistor (FET) comprising:
forming a semiconductor body upon a substrate; cleaning the surface of the semiconductor body; depositing a first dielectric layer on the semiconductor body; performing an O3 treatment that mixes with and penetrates the first dielectric layer and reacts with the semiconductor body to form an interface layer; and performing gate stack processing, including deposition of a gate electrode. |
| 地址 |
Gyeonggi-do KR |
