| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solar cell capable of enhancing an energy conversion efficiency without degrading its crystal quality, and a method for manufacturing the same. <P>SOLUTION: 5 to 30 unit layers 3a consisting of a germanium nano dot 11 and a silicon thin film 12 covering it and having a thickness 5 to 30 nm, are stacked on a surface of a p-type semiconductor substrate 2 consisting of single crystal silicon and polycrystalline silicon. The opposite side of the p-type semiconductor substrate 2 where a stacked part 3 in which unit layers 3a are stacked, is thereon, is immersed in a mixture containing hydrogen fluoride and nitrate for 1 to 20 seconds. After the surface of the stacked part 3 immersed in the mixture is cleaned, an n-type semiconductor region 3b having a thickness of 20 to 50 nm is formed by diffusing phosphorus to the surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
