| 摘要 |
PROBLEM TO BE SOLVED: To provide a local plasma processing apparatus in which the processing time can be suppressed.SOLUTION: A local plasma processing apparatus includes plasma generation means for exciting the etching gas by plasma, a mounting table for mounting a semiconductor wafer, and control means for controlling the relative position of the plasma generation means and the mounting table. The control means controls the relative position of the plasma generation means and mounting table so as to suppress the difference of profile of etching rate between a plurality of regions of the semiconductor wafer, divided into a plurality of regions where the profile of etching rate is different from each other. |
