摘要 |
Provided are semiconductor materials, transistors including the same, and electronic devices including transistors. A semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). |
申请人 |
SAMSUNG ELECTRONICS CO., LTD;SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM, TAE-SANG;KIM, SUN-JAE;KIM, HYUN-SUK;RYU, MYUNG-KWAN;PARK, JOON-SEOK;SEO, SEOK-JUN;SEON, JONG-BAEK;SON, KYOUNG-SEOK |