Wavelength converted light emitting device

摘要

Embodiments of the invention include a semiconductor structure including a light emitting layer. The semiconductor structure is attached to a support such that the semiconductor structure and the support are mechanically self-supporting. A wavelength converting material extends over the sides of the semiconductor structure and the support. In some embodiments, a thickness of the wavelength converting material on a side of the semiconductor structure is at least 25% of a thickness of the wavelength converting material over a top of the semiconductor structure.

主权项

1. A device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; a metal n-contact disposed on the n-type region and a metal p-contact disposed on p-type region; a support, wherein the semiconductor structure is attached to the support through at least one of the n-contact and the p-contact such that the semiconductor structure and the support are mechanically self-supporting; and a wavelength converting material extending over the sides of the semiconductor structure and the support; wherein the wavelength converting material is a phosphor powder mixed with a transparent binder material in a pre-fabricated sheet.