Semiconductor device and formation thereof

摘要

A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane. A dielectric is disposed within the first furrow, such that the dielectric is in contact with the first furrow between a first end of the dielectric and a second end of the dielectric. The first end is separated a first distance from the first plane. The dielectric disposed within the furrow increases the isolation of a channel portion of adjacent fins, and thus decreases current leakage of a FinFet, as compared to a FinFet including fins that do not include a dielectric disposed within a furrow.

主权项

1. A semiconductor device comprising:
a fin having a first wall extending along a first plane, the fin comprising:
a doped region, the doped region defining a first furrow on a first side of the first plane; anda dielectric disposed within the first furrow, wherein:
the dielectric is contact with the first furrow between a first end of the dielectric and a second end of the dielectric,the first end is separated a first distance from the first plane; andthe dielectric is convex such that an outer most protruding point is at least one of even with the first plane, on the first side of the first plane or on a second side of the first plane.