Diode and method of manufacturing diode

摘要

A diode includes a first semiconductor layer configured by a compound semiconductor containing impurities of a first conductivity type; a high dislocation density region; a second semiconductor layer which is laminated on the first semiconductor layer, which is lower in a concentration of impurities in a region of a side of an interface with the first semiconductor layer than that of the first semiconductor layer, and which has an opening in which a portion which corresponds to the high dislocation density region is removed; an insulating film pattern which is provided to cover an inner wall of the opening; an electrode which is provided so as to cover the insulating film pattern and to contact the second semiconductor layer; and an opposing electrode which is provided to interpose the first semiconductor layer, the second semiconductor layer and the insulating film pattern between the electrode and the opposing electrode.

主权项

1. A diode comprising:
a first semiconductor layer is a compound semiconductor layer having a crystalline structure and containing impurities of a first conductivity type; a high dislocation density region which extends in the first semiconductor layer in the film thickness direction; a second semiconductor layer which (a) has a crystalline structure continuous with that of the first semiconductor layer, (b) is laminated on a first side of the first semiconductor layer, (c) has a region at a side adjacent the first semiconductor layer with an impurity concentration lower that of the first semiconductor layer, and (d) has an opening which overlies the high dislocation density region and which extends to the first semiconductor layer; an insulating film pattern covering at least an inner wall of the opening; an electrode overlapping the opening and covering the insulating film pattern and in contact with the second semiconductor layer; and an opposing electrode adjacent a second side of the first semiconductor layer and in contact with the first semiconductor layer including the high dislocation density region.