Graphene electronic device and method of fabricating the same

摘要

A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

主权项

1. A graphene electronic device comprising:
a graphene channel layer on a substrate, the graphene channel layer consisting of at least one layer of a graphene sheet; a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer; a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, the gate oxide having substantially the same shape as the graphene channel layer between the source electrode and the drain electrode when viewed from a plan view; and a gate electrode on the gate oxide, wherein the graphene channel layer has a channel width of about 1 to about 20 nm, and the graphene electronic device is a field effect transistor.