Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material

摘要

A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.

主权项

1. A semiconductor processing composition which is effective for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate in the absence of a Cu corrosion inhibitor, wherein the substrate includes copper, low-k dielectric material and a hardmask selected from TiN or TiNxOy, the composition comprising water, at least one halide anion selected from NH4Br, at least one oxidizing agent, and a base for adjusting pH.