Techniques for forming optoelectronic devices

摘要

Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.

主权项

1. A method comprising:
providing a workpiece bearing a layer of additional material; introducing a plurality of particles through the layer of additional material to form a cleave region in the workpiece; applying energy to cleave a detached thickness of workpiece material including the layer of additional material, from a remainder of the workpiece, and forming a free standing intermediate structure that includes only the detached workpiece material and the layer of additional material; processing the layer of additional material of the intermediate structure; and bonding the processed layer of additional material to a substrate having a coefficient of thermal expansion approximately equal to a coefficient of thermal expansion of the layer of additional material, wherein mismatch between the layer of additional material and the workpiece material develops a level of stress lower than a threshold value sufficient to nucleate and propagate defects within the layer of additional material.