| 发明名称 | Semiconductor storage device having nand-type flash memory | ||
| 摘要 | A semiconductor storage device includes a plurality of memory cell transistors that are connected to each other in series, a plurality of word lines that are connected to the plurality of memory cell transistors, and a control circuit. The control circuit applies a first potential to a selected one of the plurality of word lines. The control circuit applies a second potential that is higher than the first potential to the word lines that are not selected at different timings before the first potential is applied to the selected word line. | ||
| 申请公布号 | US9257183(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201414474043 | 申请日期 | 2014.08.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Abe Kenichi;Futatsuyama Takuya;Shirakawa Masanobu |
| 分类号 | G11C16/04;G11C16/10;G11C16/26;G11C16/32 | 主分类号 | G11C16/04 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor storage device comprising: a plurality of memory cell transistors including memory cell transistors that are connected to each other in series; a plurality of word lines that are connected to the plurality of memory cell transistors; and a control circuit configured to apply a first potential to a selected one of the plurality of word lines, and a second potential that is higher than the first potential to the word lines that are not selected at different timings before the first potential is applied to the selected word line. | ||
| 地址 | Tokyo JP | ||