发明名称 Magnetic recording device and magnetic recording apparatus
摘要 An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.
申请公布号 US9257168(B2) 申请公布日期 2016.02.09
申请号 US201314078228 申请日期 2013.11.12
申请人 Kabushiki Kaisha Toshiba 发明人 Nakamura Shiho;Morise Hirofumi;Yanagi Satoshi;Saida Daisuke;Kikitsu Akira
分类号 G11C11/22;G11C11/16;G11B5/66 主分类号 G11C11/22
代理机构 Nixon & Vanderhye, P.C. 代理人 Nixon & Vanderhye, P.C.
主权项 1. A magnetic recording device comprising: a magnetic recording section; a magnetization oscillator overlapping the magnetic recording section in a stacking direction; and a first nonmagnetic layer provided between the magnetic recording section and the magnetization oscillator, the magnetic recording section including: a first ferromagnetic layer having a first magnetization;a second ferromagnetic layer overlapping the first ferromagnetic layer in the stacking direction, the second ferromagnetic layer having a second magnetization; anda second nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the magnetization oscillator including: a third ferromagnetic layer having a third magnetization;a fourth ferromagnetic layer overlapping the third ferromagnetic layer in the stacking direction, the fourth ferromagnetic layer having a fourth magnetization; anda third nonmagnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer, wherein the third ferromagnetic layer generates a radio-frequency magnetic field depending on a current passing through the first ferromagnetic layer, the second ferromagnetic layer, the second nonmagnetic layer, the third ferromagnetic layer, the fourth ferromagnetic layer, the third nonmagnetic layer and the first nonmagnetic layer in the stacking direction, the radio-frequency magnetic field is applied to the second ferromagnetic layer, and a direction of the second magnetization changes in response to a direction of the current.
地址 Tokyo JP