Sense amplification circuits, output circuits, nonvolatile memory devices, memory systems, memory cards having the same, and data outputting methods thereof

摘要

An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation.

主权项

1. An output circuit comprising:
a plurality of page buffer latches configured to latch data read from a plurality of memory cells; a plurality of sub data lines configured to receive voltages corresponding to the latched data in response to latch addresses; a data line connected to the plurality of sub data lines; a reference data line to which a current path is formed during a sensing operation; and a sense amplification circuit configured to, during the sensing operation, sense a voltage difference between the reference data line and the data line, and to output data corresponding to the sensed voltage difference.