| 发明名称 | Tracking bit cell and method | ||
| 摘要 | A method includes generating a first edge of a first tracking signal for a tracking cell, generating a first edge of a second tracking signal for the tracking cell based on the first edge of the first tracking signal, generating a first edge of a cell signal for a memory cell, generating a second edge of the first tracking signal based on the first edge of the second tracking signal, and generating a second edge of the cell signal based on the second edge of the first tracking signal. A transistor in the tracking cell operates at a tracking voltage value and a transistor in the memory cell operates at a memory voltage value different from the tracking voltage value. | ||
| 申请公布号 | US9257174(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201514817269 | 申请日期 | 2015.08.04 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Wang Bing |
| 分类号 | G11C7/22;G11C11/419 | 主分类号 | G11C7/22 |
| 代理机构 | Hauptman Ham LLP | 代理人 | Hauptman Ham LLP |
| 主权项 | 1. A method comprising: generating a first edge of a first tracking signal for a tracking cell; generating a first edge of a second tracking signal for the tracking cell based on the first edge of the first tracking signal; generating a first edge of a cell signal for a memory cell; generating a second edge of the first tracking signal based on the first edge of the second tracking signal; and generating a second edge of the cell signal based on the second edge of the first tracking signal, wherein a transistor in the tracking cell operates at a tracking voltage value, anda transistor in the memory cell operates at a memory voltage value different from the tracking voltage value. | ||
| 地址 | TW | ||