プラズマＣＶＤ成膜装置,申请号JP20120124407-传众专利搜索

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发明名称	プラズマＣＶＤ成膜装置
摘要
申请公布号	JP5854225(B2)	申请公布日期	2016.02.09
申请号	JP20120124407	申请日期	2012.05.31
申请人	株式会社島津製作所	发明人	大岸厚文;猿渡哲也;今井大輔;三科健;鈴木正康;中山胤芳
分类号	H01L21/31;C23C16/509;H01L21/205;H05H1/46	主分类号	H01L21/31
代理机构		代理人
主权项
地址

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