发明名称 Method of forming a metal pattern and method of manufacturing a display substrate
摘要 A method of forming a metal pattern includes disposing a gate metal layer on a substrate; disposing a photoresist layer on the gate metal layer; etching portions of the photoresist layer to form a first photo pattern; etching portions of the gate metal layer to form a gate pattern including a gate electrode, in which the gate metal layer is patterned using the first photo pattern as a mask; ashing an end portion of the first photo pattern to form a second photo pattern; disposing a first gate insulating layer over the substrate and the second photo pattern; removing the second photo pattern and a portion of the first gate insulating layer disposed over the second photo pattern; and disposing a second insulating layer over the gate pattern and the remaining portions of the first gate insulating layer.
申请公布号 US9257456(B2) 申请公布日期 2016.02.09
申请号 US201414541878 申请日期 2014.11.14
申请人 Samsung Display Co., Ltd. 发明人 Moon Young-Min;Park Hong-Sick
分类号 H01L27/12;H01L29/423 主分类号 H01L27/12
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A method of forming a metal pattern, comprising: disposing a gate metal layer on a substrate; disposing a photoresist layer on the gate metal layer; etching portions of the photoresist layer to form a first photo pattern; etching portions of the gate metal layer to form a gate pattern comprising a gate electrode, wherein the gate metal layer is patterned using the first photo pattern as a mask; ashing an end portion of the first photo pattern to form a second photo pattern; disposing a first gate insulating layer over the substrate and the second photo pattern; removing the second photo pattern and a portion of the first gate insulating layer disposed over the second photo pattern; and disposing a second insulating layer over the gate pattern and the remaining portions of the first gate insulating layer.
地址 Yongin-si KR