发明名称 |
Method of forming a metal pattern and method of manufacturing a display substrate |
摘要 |
A method of forming a metal pattern includes disposing a gate metal layer on a substrate; disposing a photoresist layer on the gate metal layer; etching portions of the photoresist layer to form a first photo pattern; etching portions of the gate metal layer to form a gate pattern including a gate electrode, in which the gate metal layer is patterned using the first photo pattern as a mask; ashing an end portion of the first photo pattern to form a second photo pattern; disposing a first gate insulating layer over the substrate and the second photo pattern; removing the second photo pattern and a portion of the first gate insulating layer disposed over the second photo pattern; and disposing a second insulating layer over the gate pattern and the remaining portions of the first gate insulating layer. |
申请公布号 |
US9257456(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201414541878 |
申请日期 |
2014.11.14 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Moon Young-Min;Park Hong-Sick |
分类号 |
H01L27/12;H01L29/423 |
主分类号 |
H01L27/12 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A method of forming a metal pattern, comprising:
disposing a gate metal layer on a substrate; disposing a photoresist layer on the gate metal layer; etching portions of the photoresist layer to form a first photo pattern; etching portions of the gate metal layer to form a gate pattern comprising a gate electrode, wherein the gate metal layer is patterned using the first photo pattern as a mask; ashing an end portion of the first photo pattern to form a second photo pattern; disposing a first gate insulating layer over the substrate and the second photo pattern; removing the second photo pattern and a portion of the first gate insulating layer disposed over the second photo pattern; and disposing a second insulating layer over the gate pattern and the remaining portions of the first gate insulating layer. |
地址 |
Yongin-si KR |