发明名称 Warm white LED with stacked wafers and fabrication method thereof
摘要 A warm-white-light LED structure combines a red light wafer and a blue light wafer via a bonding layer. A reflecting layer is arranged over upper and lower surfaces of the bonding layer respectively; the lower surface of the red light wafer takes up one-third or less of the upper surface of the blue light wafer, which effectively reduces packaging structure volume and time of bondings so as to optimize process flow and save fabrication cost.
申请公布号 US9257614(B2) 申请公布日期 2016.02.09
申请号 US201514639051 申请日期 2015.03.04
申请人 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Wu Chaoyu;Wu Chun-I;Qiu Shuying;Chen Yi-Yen;Tao Ching-Shan;Cai Wenbi
分类号 H01L33/46;H01L25/075;H01L33/00;H01L33/22;H01L33/32;H01L33/50;H01L33/40;H01L33/38 主分类号 H01L33/46
代理机构 Syncoda LLC 代理人 Syncoda LLC ;Ma Feng
主权项 1. A warm-white-light LED comprising: a bonding layer having a first and a second main surfaces; a red light wafer mirror system over the first main surface of the bonding layer, including a red light wafer and a first reflecting layer; and a blue light wafer mirror system over the second main surface of the bonding layer, including a blue light wafer and a second reflecting layer; wherein the first reflecting layer and the second reflecting layer are configured to separate the red light wafer and the blue light wafer to avoid mutual absorption; and wherein the red light wafer has a lower surface area less than or equal to one third of an upper surface area of the blue light wafer.
地址 Xiamen CN