Method for producing photoelectric conversion element

摘要

There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer (16) and an n-type amorphous silicon layer (14) are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (18); a second step in which an i-type amorphous silicon layer (22a) and an n-type amorphous silicon layer (23a) are formed over a back surface of the n-type monocrystalline silicon substrate (18); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer (14) and the n-type amorphous silicon layer (23a).

主权项

1. A method of producing a photovoltaic element, comprising:
a first step in which a first amorphous semiconductor-based layer is formed over a light-receiving surface of a crystalline semiconductor-based substrate; a second step in which a second amorphous semiconductor-based layer is formed over a back surface of the crystalline semiconductor-based substrate; and a third step in which, after the first step and the second step are completed, a first protection layer is formed over the first amorphous semiconductor-based layer after a second protection layer is formed over the second amorphous semiconductor-based layer, wherein the first protection layer is directly in contact with the first amorphous semiconductor-based layer; wherein the second amorphous semiconductor-based layer includes an n-type semiconductor layer provided in a first region and a p-type semiconductor layer provided in a second region different from the first region, and the photovoltaic element includes a first electrode provided on the n-type semiconductor layer and a second electrode provided on the p-type semiconductor layer.