发明名称 |
Translucent solar cell and manufacturing method thereof |
摘要 |
The present invention provides a translucent solar cell and a manufacturing method thereof. The translucent solar cell comprises, in stacking order, a substrate, a first electrode layer, a photoconductive layer and a second electrode layer. The translucent solar cell is characterized in that there are formed a plurality of first light-transmissive apertures on the second electrode layer and the plurality of first light-transmissive apertures are further extended in a depth direction to the photoconductive layer to form a plurality of second light-transmissive apertures corresponding to the first light-transmissive apertures. A projected area of each of the second light-transmissive apertures is equal to or smaller than that of a corresponding first light-transmissive aperture. |
申请公布号 |
US9257592(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US200812043807 |
申请日期 |
2008.03.06 |
申请人 |
Nexpower Technology Corp. |
发明人 |
Lu Chun-Hsiung;Bi Chien-Chung |
分类号 |
H01L25/00;H01L31/042;H01L31/00;H01L31/18;H01L31/0468 |
主分类号 |
H01L25/00 |
代理机构 |
Law Office of Michael Chen |
代理人 |
Chen Che-Yang;Law Office of Michael Chen |
主权项 |
1. A translucent solar cell, consisting of, in order of stacking, a substrate, a first electrode layer, a photoconductive layer and a second electrode layer;
wherein the photoconductive layer is a single layer structure; wherein a plurality of first light-transmissive apertures are formed on the second electrode layer, and the plurality of first light-transmissive apertures are further extended in a depth direction to the photoconductive layer to form a plurality of second light-transmissive apertures corresponding to the first light-transmissive apertures; wherein a projected area of each of the second light-transmissive apertures is smaller than that of a corresponding first light-transmissive aperture such that short-circuits between the first electrode layer, the photoconductive layer and the second electrode layer are avoided; wherein the second light-transmissive apertures are further extended in the depth direction to the first electrode layer so as to form a plurality of third light-transmissive apertures directly abutted against the substrate, wherein the projected area of the third light-transmissive apertures is equal to that of the second light-transmissive apertures; wherein the first electrode layer and the second electrode layer comprise a transparent conductive oxide selected from the group consisting of SnO2, ITO, ZnO, AZO, GZO, and IZO respectively. |
地址 |
Taichung TW |