发明名称 Translucent solar cell and manufacturing method thereof
摘要 The present invention provides a translucent solar cell and a manufacturing method thereof. The translucent solar cell comprises, in stacking order, a substrate, a first electrode layer, a photoconductive layer and a second electrode layer. The translucent solar cell is characterized in that there are formed a plurality of first light-transmissive apertures on the second electrode layer and the plurality of first light-transmissive apertures are further extended in a depth direction to the photoconductive layer to form a plurality of second light-transmissive apertures corresponding to the first light-transmissive apertures. A projected area of each of the second light-transmissive apertures is equal to or smaller than that of a corresponding first light-transmissive aperture.
申请公布号 US9257592(B2) 申请公布日期 2016.02.09
申请号 US200812043807 申请日期 2008.03.06
申请人 Nexpower Technology Corp. 发明人 Lu Chun-Hsiung;Bi Chien-Chung
分类号 H01L25/00;H01L31/042;H01L31/00;H01L31/18;H01L31/0468 主分类号 H01L25/00
代理机构 Law Office of Michael Chen 代理人 Chen Che-Yang;Law Office of Michael Chen
主权项 1. A translucent solar cell, consisting of, in order of stacking, a substrate, a first electrode layer, a photoconductive layer and a second electrode layer; wherein the photoconductive layer is a single layer structure; wherein a plurality of first light-transmissive apertures are formed on the second electrode layer, and the plurality of first light-transmissive apertures are further extended in a depth direction to the photoconductive layer to form a plurality of second light-transmissive apertures corresponding to the first light-transmissive apertures; wherein a projected area of each of the second light-transmissive apertures is smaller than that of a corresponding first light-transmissive aperture such that short-circuits between the first electrode layer, the photoconductive layer and the second electrode layer are avoided; wherein the second light-transmissive apertures are further extended in the depth direction to the first electrode layer so as to form a plurality of third light-transmissive apertures directly abutted against the substrate, wherein the projected area of the third light-transmissive apertures is equal to that of the second light-transmissive apertures; wherein the first electrode layer and the second electrode layer comprise a transparent conductive oxide selected from the group consisting of SnO2, ITO, ZnO, AZO, GZO, and IZO respectively.
地址 Taichung TW