| 发明名称 | Methods for fabricating integrated circuits including densifying interlevel dielectric layers | ||
| 摘要 | Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes densifying an upper-surface portion of an ILD layer of dielectric material that overlies a metallization layer above a semiconductor substrate to form a densified surface layer of dielectric material. The densified surface layer and the ILD layer are etched through to expose a metal line of the metallization layer. | ||
| 申请公布号 | US9257329(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201414185398 | 申请日期 | 2014.02.20 |
| 申请人 | GLOBALFOUNDRIES, INC. | 发明人 | Mieth Oliver;Peters Carsten;Huisinga Torsten |
| 分类号 | H01L21/3105;H01L21/768 | 主分类号 | H01L21/3105 |
| 代理机构 | Ingrassia Fisher & Lorenz, P.C. | 代理人 | Ingrassia Fisher & Lorenz, P.C. |
| 主权项 | 1. A method for fabricating an integrated circuit, the method comprising: densifying an upper-surface portion of an interlevel dielectric (ILD) layer of dielectric material that overlies a metallization layer above a semiconductor substrate to form a densified surface layer of dielectric material, wherein the densified surface layer has a thickness of from about 1 to about 20 nm; and etching through the densified surface layer and the ILD layer to expose a metal line of the metallization layer. | ||
| 地址 | Grand Cayman KY | ||