| 摘要 |
PROBLEM TO BE SOLVED: To provide a cubic crystal silicon carbide semiconductor substrate capable of obtaining a high-quality epitaxial film having few crystal defects by reducing crystal defects efficiently, and a cubic crystal silicon carbide semiconductor substrate manufacturing method.SOLUTION: A cubic crystal silicon carbide semiconductor substrate comprises: a silicon substrate; a first silicon carbide film formed on the surface of the silicon substrate; a mask material having an opening formed on the surface of the first silicon carbide film; and a second silicon carbide film covering the mask material and the silicon carbide film. The mask material is inclined at a predetermined inclination angle &thetas; with respect to one direction in the plane view of the first silicon carbide film.SELECTED DRAWING: Figure 3 |
