发明名称 INSPECTION METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To remove a semiconductor device having a possibility of causing a switching failure, and to suppress an increase of cost by inspection.SOLUTION: An inspection method of a semiconductor device includes: calculating a gradient of a first section set in a section from a minute current to an intermediate current in a characteristic curve representing input/output characteristics of the semiconductor device, and a gradient of a second section set in a section from the intermediate current to a rating current in that characteristic curve (Steps S1 and S2); determining whether or not the gradient in the first section and the gradient in the second section coincides with each other (Step S3); and when the gradient of the first section and the gradient of the second section coincides with each other, specifying that a cell with a defect or the like is not included in a semiconductor chip (without defect) (Step S4), and when the gradient of the first section and the gradient of the second section does not coincide with each other, specifying that the cell with the defect or the like is included in the semiconductor chip (with defect) (Step S5).SELECTED DRAWING: Figure 1
申请公布号 JP2016023964(A) 申请公布日期 2016.02.08
申请号 JP20140146488 申请日期 2014.07.17
申请人 FUJI ELECTRIC CO LTD 发明人 MITSUZUKA KANAME;KUMADA KEISHIRO;SHIIKI TAKASHI
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
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