SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with less occupied area and higher integration degree.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first conductive layer; forming a first insulation layer on the first conductive layer; forming on the first insulation layer, a second conductive layer by using a material the same with that of the first conductive layer; forming a third conductive layer on the second conductive layer; forming a second insulation layer on the third conductive layer; forming a resist mask on the second insulation layer; sequentially performing etching from an upper layer and performing formation of an opening of the first conductive layer and increment of a diameter of an opening of the second conductive layer in the same process; and etching the first insulation layer to form a contact hole which exposes a top face of the first conductive layer.SELECTED DRAWING: Figure 1