发明名称 |
ELECTRICAL DISCHARGE PROTECTION CIRCUIT AND METHOD OF USE |
摘要 |
A circuit includes a driver circuit between a first and second power supply nodes, and a first and second electrostatic discharge (ESD) protection circuits. The driver circuit is configured to generate a pair of differential signals at a first output node and a second output node. The first ESD protection circuit is coupled between the first output node and the second power supply node. The first ESD protection circuit includes a first transistor, and the first transistor includes a drain region and a source region in a well region. The second ESD protection circuit is coupled between the second output node and the second power supply node. The second ESD protection circuit includes a second transistor, and the second transistor includes a drain region and a source region in the well region. |
申请公布号 |
US2016036217(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201414446675 |
申请日期 |
2014.07.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SU Yu-Ti;HSU Chia-Wei;TSENG Jen-Chou |
分类号 |
H02H9/04 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
1. A circuit, comprising:
a driver circuit between a first power supply node and a second power supply node, the driver circuit comprising a first output node and a second output node, the driver circuit being configured to generate a pair of differential signals at the first output node and the second output node; a first electrostatic discharge (ESD) protection circuit coupled between the first output node and the second power supply node, the first ESD protection circuit comprising a first transistor of a predetermined type, and the first transistor comprising a drain region and a source region in a well region of a first type doping ; and a second ESD protection circuit coupled between the second output node and the second power supply node, the second ESD protection circuit comprising a second transistor of the predetermined type, and the second transistor comprising a drain region and a source region in the well region of the first type doping. |
地址 |
Hsinchu TW |