FREQUENCY MULTIPLIER BASED ON A LOW DIMENSIONAL SEMICONDUCTOR STRUCTURE

摘要

A frequency multiplier based on a low dimensional semiconductor structure, including an insulating substrate layer, a semiconductor conducting layer arranged on the surface of the insulating substrate layer, an insulating protective layer arranged on the surface of the semiconductor conducting layer, an insulating carving groove penetrating the semiconductor conducting layer, an inlet electrode arranged on the side surface of the semiconductor conducting layer, and an outlet electrode arranged on the side surface corresponding to the access electrode is provided. The semiconductor conducting layer comprises two two-dimensional, quasi-one-dimensional, or one-dimensional current carrying channels near to and parallel to each other. The frequency multiplier has advantages that the structure is simple, the process is easy to implement, no extra filter circuit needs to be added, dependence on material characteristics is little, and the selection range of materials is wide.

主权项

1. A frequency multiplier based on a low dimensional semiconductor structure, comprising an insulating substrate layer, a semiconductor conducting layer arranged on the surface of the insulating substrate layer, an insulating conducting layer arranged on the surface of the semiconductor conducting layer, an insulating carving groove penetrating the semiconductor conducting layer, an inlet electrode arranged on a side surface of the semiconductor conducting layer and an outlet electrode arranged on the other side surface corresponding to the inlet electrode, wherein the semiconductor conducting layer comprises two two-dimensional, quasi-one-dimensional, or one-dimensional current carrying channels close and parallel to each other.