发明名称 |
TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS |
摘要 |
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate. |
申请公布号 |
US2016035725(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514860341 |
申请日期 |
2015.09.21 |
申请人 |
INTEL CORPORATION |
发明人 |
Pradhan Sameer S.;BERGSTROM DANIEL B.;CHUN JIN-SUNG;CHIU JULIA |
分类号 |
H01L27/088;H01L29/06;C22C30/00;H01L29/49;C22C14/00;C22C21/00;H01L29/45;H01L29/51 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
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主权项 |
1. A device, comprising:
a substrate, wherein the substrate comprises a silicon fin; a first dielectric layer on the substrate, wherein the first dielectric layer comprises silicon and oxygen; a second dielectric layer on the first dielectric layer, wherein the second dielectric layer comprises hafnium and oxygen; a pair of gate spacers on the substrate, wherein the gate spacers comprise a dielectric material; an NMOS metal gate electrode above the second dielectric layer and between the pair of gate spacers, wherein the NMOS metal gate electrode comprises:
a first metal layer proximate the pair of gate spacers and above the second dielectric layer, wherein the first metal layer comprises titanium and nitrogen; anda second metal layer on the first metal layer, wherein the second metal layer comprises tungsten; a source region proximate to one of the pair of gate spacers, and a drain region proximate the other one of the pair of gate spacers, wherein the source region and the drain region comprise an n-type dopant; a first contact coupled to the source region, wherein the first contact comprises a tungsten material above a first barrier layer; and a second contact coupled to the drain region, wherein the second contact comprises a tungsten material above a second barrier layer. |
地址 |
Santa Clara CA US |