| 主权项 |
1. A light-emitting transistor device comprising:
a substrate; a gate electrode; a channel layer comprising one or more organic sublayers, the one or more organic sublayers comprising:
a first sublayer comprising an electron-transporting semiconductor material,a second sublayer comprising a hole-transporting semiconductor material, anda third sublayer comprising an electroluminescent semiconductor material and positioned between the first sublayer and the second sublayer; a gate insulating layer positioned between the gate electrode and the channel layer; and a hole electrode and an electron electrode being spaced apart from each other at a planar distance defining the length (L) of a channel region therebetween, the hole electrode being in contact with the second sublayer of the channel layer and the electron electrode being in contact with the first sublayer of the channel layer; wherein the channel layer further comprises a first electrically insulating element positioned between the hole electrode and the first sublayer of the channel layer, and a second electrically insulating element between the electron electrode and the second sublayer of the channel layer, wherein the first electrically insulating element and the second electrically insulating element are spaced apart from each other at a planar distance that is less than L; and wherein upon application of a first bias voltage to the gate electrode while maintaining a second bias voltage between the electron electrode and the hole electrode, the light-emitting transistor device is adapted to emit light as a stripe that is parallel to the plane of the third sublayer. |
