| 发明名称 |
Techniques for Perovskite Layer Crystallization |
| 摘要 |
Vacuum annealing-based techniques for forming perovskite materials are provided. In one aspect, a method of forming a perovskite material is provided. The method includes the steps of: depositing a metal halide layer on a sample substrate; and vacuum annealing the metal halide layer and methylammonium halide under conditions sufficient to form methylammonium halide vapor which reacts with the metal halide layer and forms the perovskite material on the sample substrate. A perovskite-based photovoltaic device and method of formation thereof are also provided. |
| 申请公布号 |
US2016035917(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201414449420 |
申请日期 |
2014.08.01 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Gershon Talia S.;Guha Supratik;Gunawan Oki;Todorov Teodor K. |
| 分类号 |
H01L31/032;H01L31/18 |
主分类号 |
H01L31/032 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a perovskite material, comprising the steps of:
depositing a metal halide layer on a sample substrate; and vacuum annealing the metal halide layer and methylammonium halide under conditions sufficient to form methylammonium halide vapor which reacts with the metal halide layer and forms the perovskite material on the sample substrate. |
| 地址 |
Armonk NY US |
