| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING METAL OXIDE |
| 摘要 |
A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer. |
| 申请公布号 |
US2016035898(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514879423 |
申请日期 |
2015.10.09 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
WENXU Xianyu;Yang Woo-young;Moon Chang-youl;Park Yong-young;Lee Jeong-yub |
| 分类号 |
H01L29/786;H01L29/161;H01L29/45;H01L29/16;H01L29/04 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
Suwon-si KR |
