| 摘要 |
Provided is a germanium-silicon modulator (100), comprising: a substrate layer (110), comprising a silicon substrate (112) and an oxide layer (114) arranged on the silicon substrate; top layer silicon (120), formed on the oxide layer (114), wherein a waveguide layer (122) is formed on the top layer silicon (120); a doped layer, comprising a first doped flat panel (132) and a second doped flat panel (133), wherein a first-type light doped area (134) is formed on the first doped flat panel (132), a second-type light doped area (135) is formed on the second doped flat panel (133), and the first-type light doped area (134), the waveguide layer (122) and the second-type light doped area (135) form a PIN junction; and a modulation layer (140), arranged on the waveguide layer (122) and connected to the PIN junction in parallel. For an incident light beam of a specific wavelength, when a reversed modulation electric signal is loaded onto the PIN node, a light absorption coefficient of the modulation layer (140) to the light beam is varied along with the variation of the modulation electric signal, the luminous power of the light beam passing through a modulation area is also varied accordingly, thereby realising the electro-optical modulation of the light beam. |
