发明名称 |
SUBSTRATE TARGET FOR IN-SITU LITHOGRAPHY METROLOGY, METROLOGY METHOD FOR IN-SITU LITHOGRAPHY, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING IN-SITU METROLOGY |
摘要 |
A substrate can include a feature pattern included in an integrated circuit on the substrate and an in-situ metrology pattern spaced apart from the feature pattern on the substrate, the in-situ metrology pattern and the feature pattern both configured to have equal heights relative to a surface of the substrate. |
申请公布号 |
US2016033398(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514728529 |
申请日期 |
2015.06.02 |
申请人 |
Kim Ji-myung;Jeong Gyu-min;Jeong Tae-hwa;Yoon Kwang-sub |
发明人 |
Kim Ji-myung;Jeong Gyu-min;Jeong Tae-hwa;Yoon Kwang-sub |
分类号 |
G01N21/47;G01N21/95 |
主分类号 |
G01N21/47 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate target for lithography metrology comprising:
a substrate; a feature pattern on the substrate; and a SubWavelength Grating (SWG) key on a same level relative to the substrate as the feature pattern, the SWG key comprising a plurality of diffraction patterns spaced apart at a first pitch that is configured to measure a focal variation affecting formation of the feature pattern. |
地址 |
Hwaseong-si KR |