发明名称 SUBSTRATE TARGET FOR IN-SITU LITHOGRAPHY METROLOGY, METROLOGY METHOD FOR IN-SITU LITHOGRAPHY, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING IN-SITU METROLOGY
摘要 A substrate can include a feature pattern included in an integrated circuit on the substrate and an in-situ metrology pattern spaced apart from the feature pattern on the substrate, the in-situ metrology pattern and the feature pattern both configured to have equal heights relative to a surface of the substrate.
申请公布号 US2016033398(A1) 申请公布日期 2016.02.04
申请号 US201514728529 申请日期 2015.06.02
申请人 Kim Ji-myung;Jeong Gyu-min;Jeong Tae-hwa;Yoon Kwang-sub 发明人 Kim Ji-myung;Jeong Gyu-min;Jeong Tae-hwa;Yoon Kwang-sub
分类号 G01N21/47;G01N21/95 主分类号 G01N21/47
代理机构 代理人
主权项 1. A substrate target for lithography metrology comprising: a substrate; a feature pattern on the substrate; and a SubWavelength Grating (SWG) key on a same level relative to the substrate as the feature pattern, the SWG key comprising a plurality of diffraction patterns spaced apart at a first pitch that is configured to measure a focal variation affecting formation of the feature pattern.
地址 Hwaseong-si KR