| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of a fast operation; and provide a semiconductor device which is unlikely to cause fluctuation in electrical characteristics due to short-channel effects.SOLUTION: A transistor comprises: a semiconductor layer formed by using a crystalline oxide semiconductor; a channel formation region, a source region and a drain region which are formed in the semiconductor layer. The source region and drain region are formed in a self-alignment process of adding one of or a plurality of group 15 elements to the semiconductor layer by using a gate electrode as a mask. A wurtzite type crystalline structure can be provided to the source region and the drain region.SELECTED DRAWING: Figure 1 |
