METHOD OF CONDITIONING VACUUM CHAMBER OF SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS

摘要

A method of conditioning a vacuum chamber of a semiconductor substrate processing apparatus includes forming a layer of an organic polymeric film on plasma or process gas exposed surfaces thereof. The method includes: (a) flowing a first reactant in vapor phase of a diacyl chloride into the vacuum chamber; (b) purging the vacuum chamber after a flow of the first reactant has ceased; (c) flowing a second reactant in vapor phase into the vacuum chamber selected from the group consisting of a diamine, a diol, a thiol, and a trifunctional compound to form a layer of an organic polymeric film on the plasma or process gas exposed surfaces of the vacuum chamber; and (d) purging the vacuum chamber to purge excess second reactant and reaction byproducts from the vacuum chamber.

主权项

1. A method of conditioning a vacuum chamber of a semiconductor substrate processing apparatus in which semiconductor substrates are processed by forming an organic polymeric film on plasma or process gas exposed surfaces of the vacuum chamber, the method comprising:
(a) flowing a first reactant in vapor phase of a diacyl chloride into the vacuum chamber and allowing the first reactant to adsorb onto plasma or process gas exposed surfaces of the vacuum chamber; (b) purging the vacuum chamber with a purge gas after a flow of the first reactant has ceased to purge excess first reactant from the vacuum chamber; (c) flowing a second reactant in vapor phase into the vacuum chamber selected from the group consisting of a diamine, a diol, a thiol, and a trifunctional compound wherein the first and second reactants react to form a layer of an organic polymeric film on the plasma or process gas exposed surfaces of the vacuum chamber; and (d) purging the vacuum chamber with the purge gas after a flow of the second reactant has ceased to purge excess second reactant and reaction byproducts from the vacuum chamber.