| 摘要 |
This semiconductor device comprises: a high-side transistor including a first gate electrode, a first drain electrode, and a first source electrode; a low-side transistor including a second gate electrode, a second drain electrode, and a second source electrode; a plurality of first drain pads (14) arranged above the first drain electrode, and electrically connected to the first drain electrode; a plurality of first source pads (15) arranged above the second source electrode, and electrically connected to the second source electrode; a plurality of first common wiring lines (16) arranged above the first source electrode and above the second drain electrode, and electrically connected to the first source electrode and the second drain electrode; and a plurality of second common wiring lines (17) connected to the first common wiring lines (16), and extending in a direction intersecting with the first common wiring lines (16). |
