IMPROVED ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS PERFORMING THE SAME

摘要

The present invention provides an improved ion implantation method and an ion implantation apparatus for performing the improved ion implantation method, belongs to the field of ion implantation technology, which can solve the problem of the poor stability and uniformity of the ion beam of the existing ion implantation apparatus. The improved ion implantation method of the invention comprises steps of: step S1, detecting beam flow densities and beam flow distribution nonuniformities under various decelerating voltages; step S2, determining an operation decelerating voltage based on the beam flow densities and the beam flow distribution nonuniformities; and step S3, performing an ion implantation under the determined operation decelerating voltage. The present invention ensures the uniformity and stability of the ion beam, and thus ensures the uniformity of performances of the processed base materials in each batch or among various batches.

主权项

1. An improved ion implantation method comprising steps of:
step S1, detecting beam flow densities and beam flow distribution nonuniformities under various decelerating voltages; step S2, determining an operation decelerating voltage based on the beam flow densities and the beam flow distribution nonuniformities; and step S3, performing an ion implantation under the determined operation decelerating voltage.