Common Drain Semiconductor Device Structure and Method

摘要

In one embodiment, a common drain semiconductor device includes a substrate, having two transistors integrated therein. The substrate also includes a plurality of active regions on a major surface of the substrate. The active regions of each transistor may be interleaved.

主权项

1. A semiconductor device comprising:
a substrate having first and second opposing major surfaces; a plurality of first active regions in the substrate adjacent the first major surface, wherein the first active regions and the substrate form a first transistor; a plurality of second active regions in the substrate adjacent the first major surface, wherein the second active regions and the substrate form a second transistor, and wherein the plurality of first active regions and the plurality of second active regions are interleaved and arranged in an alternating pattern; a plurality of gate trench structures within the plurality of first active regions and the plurality of second active regions; a plurality of first conductive layers coupled to the plurality of first active regions adjacent the first major surface; a plurality of second conductive layers coupled to the plurality of second active regions adjacent the first major surface, wherein the plurality of first conductive layers and the plurality of second conductive layers are interleaved and arranged in the alternating pattern.