发明名称 METHOD AND APPARATUS FOR MEASURING SURFACE PROFILE
摘要 [Problem] To provide a device for measuring and method for measuring a surface shape that, by means of measuring the shape of the surface of a semiconductor layer when forming the semiconductor layer by means of a vapor deposition method, are able to perform correction and the like of the shape of the surface. [Solution] A single laser beam is reflected by a mobile mirror, generating incident laser light (Ld1, Ld2, Ld3) separated essentially into three beams, and incident points (P1, P2, P3) at the surface of the semiconductor layer (7) formed within a chamber (2) are irradiated by the incident laser light (Ld1, Ld2, Ld3). By detecting the laser reflected light (Lv1, Lv2, Lv3) from each incident point (P1, P2, P3) by means of a light position sensor, the surface shape of the film including the incident points (P1, P2, P3) is measured.
申请公布号 CA2956518(A1) 申请公布日期 2016.02.04
申请号 CA20142956518 申请日期 2014.07.30
申请人 YSYSTEMS LTD. 发明人 LACROIX, YVES
分类号 G01B11/24 主分类号 G01B11/24
代理机构 代理人
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